The usage of the molecular beam epitaxy method for making thin films and multi-layer semiconductor substances in space
Space technics and technology
Moscow Aviation Institute (National Research University), 4, Volokolamskoe shosse, Moscow, А-80, GSP-3, 125993, Russia
AbstractThe possibility of producing thin films and multi-layer semiconductor substances by means of molecular beam epitaxy method is considered in the article. The main benefits of the method are specified. The author produces the existing experience of the application of the technique on the land-based and space plants.