The usage of the molecular beam epitaxy method for making thin films and multi-layer semiconductor substances in space

Space technics and technology


Аuthors

Vaschenko A. V.

Moscow Aviation Institute (National Research University), 4, Volokolamskoe shosse, Moscow, А-80, GSP-3, 125993, Russia

e-mail: AlekseyVash@yandex.ru

Abstract

The possibility of producing thin films and multi-layer semiconductor substances by means of molecular beam epitaxy method is considered in the article. The main benefits of the method are specified. The author produces the existing experience of the application of the technique on the land-based and space plants.


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